sot-723 plastic-encapsulate mosfets n-channel mosfet features z low on-resistance z fast switching speed z low voltage drive makes this device ideal for portable equipment z drive circuits can be simple z parallel use is easy applica tions interfacing , switching marking:kn *a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use a protection circuit when the fixed voltages are exceeded. maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current i d 100 ma power dissipation p d 0.15 w thermal resistance from junction to ambient r ja 833 /w junction temperature t j 150 storage temperature t stg -55 ~+150 * pw 10 s ,duty cycle 1% so t -723 1. gate 2. source 3. drain kn 2012-0 will as electronic corp. 6 . 0 7
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit drain-source breakdown voltage v (br) dss v gs = 0v, i d =10a 30 v gate-source leakage current i gss v ds =0v, v gs =20v 1 a zero gate voltage drain current i dss v ds =30v, v gs =0v 1.0 a gate threshold voltage v gs(th) v ds =3v, i d =100a 0.8 1.5 v v gs =4v, i d =10ma 5 8 static drain-source on-state resistance r ds(on) v gs =2.5v, i d =1ma 7 13 ? forward transconductance g fs v ds =3v, i d =10ma 20 ms input capacitance c iss 13 output capacitance c oss 9 reverse transfer capacitance c rss v ds =5v,v gs =0v,f =1mhz 4 pf turn-on delay time t d(on) 15 rise time t r 35 turn-off delay time t d(off) 80 fall time t f v gs =5v,v dd =5v, i d =10ma r l =500 ?, r g =10 ? 80 ns 2012-0 willas electronic corp. sot-723 plastic-encapsulate mosfets 6 . 0 7
012345 0.00 0.05 0.10 0.15 0.20 01234 0.1 1 10 100 0 5 10 15 20 0 5 10 15 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1 10 100 0 20 40 60 4.0v t a =25 pulsed output characteristics 3.5v v gs =3.0v v gs =2.5v v gs =2.0v v gs =1.5v drain current i d (a) drain to source voltage v ds (v) 0.3 3 30 v ds =3v t a =25 pulsed transfer characteristics 200 drain current i d (ma) gate to source voltage v gs (v) t a =25 pulsed i d =100ma i d =50ma v gs r ds(on) on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) 0.3 3 30 200 typical characteristics v gs =0v t a =25 pulsed v sd i s 200 source current i s (ma) source to drain voltage v sd (v) 30 3 t a =25 pulsed i d r ds(on) v gs =2.5v v gs =4v on-resistance r ds(on) ( ? ) drain current i d (ma) 2012-0 willas electronic corp. sot-723 plastic-encapsulate mosfets 6 . 0 7
outline drawing dimensions in inches and (millimeters) sot-723 rev.c .003(0.8) .049(1.25) .045(1.15) .006(0.15)min. .007(0.17) .003(0.07) .034(0.85) .030(0.45) .011(0.27) .006(0.15) .049(1.25) .045(1.15) .034(0.85) .030(0.75) 2012-0 willas electronic corp. sot-723 plastic-encapsulate mosfets 6 . 0 7
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